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| CMSD4448 SUPER-MINI HIGH SPEED SWITCHING DIODE Central DESCRIPTION: TM Semiconductor Corp. SUPER mini TM The CENTRAL SEMICONDUCTOR CMSD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded supermini surface mount package, designed for high speed switching applications. SOT-323 CASE MAXIMUM RATINGS: (TA=25oC) SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ,Tstg JA UNITS V V mA mA mA mA mW oC oC/W Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 sec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 75 100 250 250 4000 1000 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted) SYMBOL VBR VBR IR VF VF CT trr TEST CONDITIONS MIN IR=5.0A 75 IR=100A 100 VR=20V IF=5.0mA 0.62 IF=100mA VR=0, f=1 MHz IR=IF=10mA, RL=100, Rec. to 1.0mA MAX UNITS V V nA V V pF ns 25 0.72 1.0 4.0 4.0 236 All dimensions in inches (mm). NO CONNECTION A C R2 R1 237 |
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